most citedThe dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

7 citations · 7 across the 1 of their papers we have counts for

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physics.app-ph2023★ 7 cited

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

J. Smalc-Koziorowska, J. Moneta, G. Muziol +5

(a+c) dislocations in hexagonal materials are typically observed to be dissociated into partial dislocations. Edge (a+c) dislocations are introduced into (0001) nitride semiconduct…