3 papers
cond-mat.mtrl-sci2025
Photoluminescence Features of Few-Layer Hexagonal -InSe
I. A. Eliseyev, A. I. Veretennikov, A. I. Galimov +9
Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study f…
physics.app-ph2024
Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
Vera Lendyashova, Igor Ilkiv, Bogdan Borodin +4
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a s…
cond-mat.mes-hall2023
Allotropic GaSe/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission
Maxim Rakhlin, Sergey Sorokin, Aidar Galimov +5
The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenid…