4 papers
Multi-level Ï-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Luigi Ruggiero, Vera Jo Weibel, Pauline Drexler +5
Using on-chip microwave measurements, we investigate multilevel -junctions formed by proximitized quantum dot (QD) in a germanium (Ge)/silicon-germanium (SiGe) heterostructure.…
Direct observation of strain and confinement shaping the hole subbands of Ge quantum wells
Enrico Della Valle, Arianna Nigro, Miki Bonacci +6
Germanium-silicon-germanium (Ge/SiGe) heterostructures have emerged as a promising platform for hole-spin quantum technologies and high-mobility electronics, where st…
High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
Luigi Ruggiero, Carlo Ciacca, Pauline Drexler +5
Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they…
Impact of surface treatments on the transport properties of germanium 2DHGs
Nikunj Sangwan, Eric Jutzi, Christian Olsen +4
Holes in planar germanium (Ge) heterostructures show promise for quantum applications, particularly in superconducting and spin qubits, due to strong spin-orbit interaction, low ef…