most citedFast Silicon Carbide MOSFET based high-voltage push-pull switch for charge state separation of highly charged ions with a Bradbury-Nielsen Gate

6 citations · 6 across the 1 of their papers we have counts for

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1 paper

physics.ins-det2023★ 6 cited

Fast Silicon Carbide MOSFET based high-voltage push-pull switch for charge state separation of highly charged ions with a Bradbury-Nielsen Gate

Christoph Schweiger, Menno Door, Pavel Filianin +8

In this paper we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel Silicon Carbide Metal Oxide Semiconductor Field-Effect Tr…