A Robust High-temperature Multiferroic Device with Tunable Topological Hall Effect

Zhi Shiuh Lim, Changjian Li, Ping Yang +1

We fabricated Pt/La0.5Ba0.5MnO3 ultrathin films with integration to the PbZr0.2Ti0.8O3 ferroelectric. Strong Topological Hall Effect can be measured across a wide temperature range…