most citedFerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

44 citations · 107 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.mes-hall20237 cited

Defeating Broken Symmetry with Doping: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures

Jimy Encomendero, Vladimir Protasenko, Debdeep Jena +1

Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum conf…

physics.app-ph202315 cited

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Jimy Encomendero, Vladimir Protasenko, Farhan Rana +2

The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applicati…

cond-mat.mes-hall202341 cited

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Jimy Encomendero, Vladimir Protasenko, Berardi Sensale-Rodriguez +4

The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach.…

physics.app-ph202344 cited

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

J. Casamento, K. Nomoto, T. S. Nguyen +11

We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…