2 citations · 4 across the 4 of their papers we have counts for
4 papers
Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
Niklas Wolff, Georg Schönweger, Redwanul Md. Islam +4
The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. Thi…
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Md Redwanul Islam, Niklas Wolff, Georg Schönweger +8
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact…
The Interplay Between Imprint, Wake-Up Like Effects and Domains in Ferroelectric AlScN
Maike Gremmel, Simon Fichtner
This paper investigates wake-up and imprint in ferroelectric AlScN films. The study employs a series of I-V and P-E measurements with varying electric field amplitudes and voltage…
In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Georg Schönweger, Niklas Wolff, Md Redwanul Islam +5
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution…