most citedInfluence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS

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physics.app-ph2023

High Precision Orientation Mapping from 4D-STEM Precession Electron Diffraction data through Quantitative Analysis of Diffracted Intensities

Leonardo Corrêa, Eduardo Ortega, Arturo Ponce +2

The association of scanning transmission electron microscopy (STEM) and the detection of a diffraction pattern at each probe position (so-called 4D-STEM) represents one of the most…