most citedDisorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

3 citations · 3 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2023★ 3 cited

Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Tivadar Lohner, Attila Nemeth, Zsolt Zolnai +12

Ion implantation has been a key technology for the controlled surface modification of materials in microelectronics and generally, for tribology, biocompatibility, corrosion resist…