4 citations · 8 across the 3 of their papers we have counts for
3 papers
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
Benjamin Damilano, Rémi Aristégui, Henryk Teisseyre +8
GaN/AlxGa1-xN quantum wells were grown by molecular beam epitaxy on high quality bulk (0001) GaN substrates. The quantum well thickness was set in the 6-8 nm range to favor the pho…
ZnO nanowires grown on Al2O3-ZnAl2O4 nanostructure using solid-vapor mechanism
Wiktoria Zajkowska, Jakub Turczynski, Boguslawa Kurowska +4
We present Al2O3-ZnAl2O4-ZnO nanostructure, which could be a prominent candidate for optoelectronics, mechanical and sensing applications. While ZnO and ZnAl2O4 composites are most…
Optical, electronic and structural properties of ScAlMgO4
Tomasz Stefaniuka, Jan Suffczyński, Małgorzata Wierzbowsk +5
Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages ove…