Selective Direct Bonding of High Thermal Conductivity 3C-SiC Film to \b{eta}-Ga2O3 for Top-Side Heat Extraction

Jianbo Liang, Hiromu Nagai, Zhe Cheng +8

beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, t…