Shape relaxation of epitaxial mesa for finite-size strain-engineering

Kennet D. R. Hannikainen, Luc Favre, Fabien Deprat +3

Silicon-Germanium (Si${}_{1-x}$Ge${}_x$) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channe…