collaborators

1 paper

eess.SY2022

Valley-Spin Hall Effect-based Nonvolatile Memory with Exchange-Coupling-Enabled Electrical Isolation of Read and Write Paths

Karam Cho, Sumeet Kumar Gupta

Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic rando…