1 citations · 1 across the 2 of their papers we have counts for
3 papers
cs.ET2022★ 1 cited
Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors
Hongtao Zhong, Zijie Zheng, Leming Jiao +8
Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role…
cond-mat.mes-hall2022
A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training
Dong Zhang, Yuye Kang, Gan Liu +10
In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroel…
cond-mat.mes-hall2021
Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors
Chen Sun, Chao Li, Subhranu Samanta +11
3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instabili…