1 citations · 1 across the 2 of their papers we have counts for
2 papers
physics.app-ph2024
Gated-Channel Conductivity Modulation by Hole Storage Effect Under Pulsed Conditions in p-GaN Gate Double Channel HEMT
Hang Liao, Zheyang Zheng, Ji Shu +1
Recently, a p-GaN gate double channel HEMT (DC-HEMT) with conductivity modulation has been reported. The conductivity modulation is realized by hole storage in the gate stack and o…
physics.app-ph2022★ 1 cited
Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension
Junting Chen, Junlei Zhao, Sirui Feng +8
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN sur…