29 citations · 34 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2022★ 1 cited
Wafer-scale detachable monocrystalline Germanium nanomembranes for the growth of III-V materials and substrate reuse
Nicolas Paupy, Zakaria Oulad Elhmaidi, Alexandre Chapotot +32
Germanium (Ge) is increasingly used as a substrate for high-performance optoelectronic, photovoltaic, and electronic devices. These devices are usually grown on thick and rigid Ge…
cond-mat.mtrl-sci2022★ 29 cited
Defect free strain relaxation of microcrystals on mesoporous patterned silicon
Alexandre Heintz, Bouraoui Ilahi, Alexandre Pofelski +7
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functi…
cond-mat.mes-hall2015★ 4 cited
Modelling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
M. Souaf, M. Baira, H. Maaref +1
In this work, we have theoretically investigated the intermixing effect in highly strained InGaAs/GaAs quantum well (QW) taking into consideration the composition p…