activity
20212026
most citedNonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems

12 citations · 35 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2026

From Processing to Functionality: Engineering Accessible Material States in Cu-Embedded SiO Memristive Devices

Tobias Gergs, Rouven Lamprecht, Sahitya Yarragolla +5

Resistive switching in oxide-based devices is widely governed by stochastic defect processes, yet a predictive link between fabrication conditions and functional behavior remains e…

cond-mat.mtrl-sci2026

On the physical origins of switching diversity in Cu-embedded SiO memristive devices

Sahitya Yarragolla, Rouven Lamprecht, Tobias Gergs +4

Resistive switching devices with sub-stoichiometric SiO and pancake-like Cu nanoparticles (Cu-PCs) exhibit distinct macroscopic current-voltage characteristics classified as ca…

cond-mat.mtrl-sci2024

Physics-based Modeling and Simulation of Nanoparticle Networks

Torben Hemke, Robin Struck, Sahitya Yarragolla +3

This study presents the computational modeling and simulation of silver nanoparticle networks (NPNs), which, in the realm of neuromorphic computation, suggest to be a promising can…

cs.ET2024★ 12 cited

Nonlinear behavior of memristive devices for hardware security primitives and neuromorphic computing systems

Sahitya Yarragolla, Torben Hemke, Fares Jalled +4

Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonline…

cond-mat.mes-hall2024★ 3 cited

Coexistence of resistive capacitive and virtual inductive effects in memristive devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-t…

cond-mat.mes-hall2024★ 9 cited

Non-zero crossing current-voltage characteristics of interface-type resistive switching devices

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +1

A number of memristive devices, mainly ReRAMs, have been reported to exhibit a unique non-zero crossing hysteresis attributed to the interplay of resistive and not yet fully unders…

cs.ET2022

Physics inspired compact modelling of BiFeO based memristors for hardware security applications

Sahitya Yarragolla, Nan Du, Torben Hemke +4

With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the…

cs.ET2021★ 11 cited

Stochastic behaviour of an interface-based memristive device

Sahitya Yarragolla, Torben Hemke, Jan Trieschmann +3

A large number of simulation models have been proposed over the years to mimic the electrical behaviour of memristive devices. The models are based either on sophisticated mathemat…