7 citations · 35 across the 11 of their papers we have counts for
12 papers
Characterization of the H2M Monolithic CMOS Sensor
Rafael Ballabriga, Eric Buschmann, Michael Campbell +29
The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addre…
Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Corentin Lemoine, Rafael Ballabriga, Eric Buschmann +28
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors fo…
Transient studies using a TCAD and Allpix Squared combination approach
Manuel A. Del Rio Viera, Eric Buschmann, Ankur Chauhan +22
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density an…
The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Sara Ruiz Daza, Rafael Ballabriga, Eric Buschmann +28
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensor…
Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
Håkan Wennlöf, Dominik Dannheim, Manuel Del Rio Viera +17
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electro…
Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli +91
Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise…
Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology
Adriana Simancas, Justus Braach, Eric Buschmann +22
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collecti…
Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
Adriana Simancas, Justus Braach, Eric Buschmann +21
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in par…
TelePix -- A fast region of interest trigger and timing layer for the EUDET Telescopes
Heiko Augustin, Sebastian Dittmeier, Jan Hammerich +8
Test beam facilities are essential to study the response of novel detectors to particles. At the DESY II Test Beam facility, users can test their detectors with an electron beam wi…
Towards a New Generation of Monolithic Active Pixel Sensors
Ankur Chauhan, Manuel Del Rio Viera, Doris Eckstein +16
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, mor…
Upgrading the Beam Telescopes at the DESY II Test Beam Facility
H. Augustin, R. Diener, S. Dittmeier +14
The DESY II Test Beam Facility is a key infrastructure for modern high energy physics detector development, providing particles with a small momentum spread in a range from 1 to 6…
The Tangerine project: Development of high-resolution 65 nm silicon MAPS
Håkan Wennlöf, Ankur Chauhan, Manuel Del Rio Viera +16
The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a…