4 papers
Impact of Ge substrate Thicknesses and Epitaxy Growth Conditions on the Optical and Material Properties of Ge- and GaAs-based VCSELs
Wenhan Dong, Zeyu Wan, Yun-Cheng Yang +4
We present a comparative study of the optical and material property dependences of VCSELs on Ge or GaAs substrate thicknesses and epitaxy process conditions. It was found that adju…
Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +7
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown…
Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates
Jia Guo, Yunlong Zhao, Markus Feifel +7
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch pa…
Monolithic integration of 940 nm AlGaAs distributed Bragg reflectors on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +8
High quality 940 nm AlGaAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivi…