7 citations · 11 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2024★ 7 cited
Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab
Jerome Mitard, Luka Kljucar, Nouredine Rassoul +19
Back and double gate IGZO nFETs have been demonstrated down to 120nm and 70nm respectively leveraging 300mm fab processing. While the passivation of oxygen vacancies in IGZO is cha…
cond-mat.mes-hall2022★ 4 cited
Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device
M. Thesberg, Z. Stanojevic, O. Baumgartner +14
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formu…