Bandstructure and mobility variations in p-type Silicon nanowires under electrostatic gate field

Neophytos Neophytou, Oskar Baumgartner, Zlatan Stanojevic +1

The sp3d5s*-spin-orbit-coupled atomistic tight-binding (TB) model is used for the electronic structure calculation of Si nanowires (NWs), self consistently coupled to a 2D Poisson…