1 citations · 2 across the 4 of their papers we have counts for
4 papers
Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
D. Gogova, D. Tran, V. Stanishev +11
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…
Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
Minho Kim, Dat Q. Tran, Plamen P. Paskov +3
We investigate the influence of AlN buffer thickness on the structural, electrical, and thermal properties of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on semi-ins…
Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces
Dat Q. Tran, Minho Kim, Okhyun Nam +2
Thermal transport in high-electron-mobility-transistor (HEMT) structures grown on 4H-SiC substrates by metalorganic-vapour-phase epitaxy (MOCVD) is systematically investigated. The…
Polarity control by inversion domain suppression in N-polar III-nitride heterostructures
Hengfang Zhang, Ingemar Persson, Jr. -Tai Chen +5
Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is…