1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025
Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces
Dat Q. Tran, Minho Kim, Okhyun Nam +2
Thermal transport in high-electron-mobility-transistor (HEMT) structures grown on 4H-SiC substrates by metalorganic-vapour-phase epitaxy (MOCVD) is systematically investigated. The…
physics.app-ph2022★ 1 cited
Polarity control by inversion domain suppression in N-polar III-nitride heterostructures
Hengfang Zhang, Ingemar Persson, Jr. -Tai Chen +5
Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is…