29 citations · 36 across the 4 of their papers we have counts for
3 papers · 1 filter
Polarity control by inversion domain suppression in N-polar III-nitride heterostructures
Hengfang Zhang, Ingemar Persson, Jr. -Tai Chen +5
Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is…
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
Anelia Kakanakova-Georgieva, Alexis Papamichail, Vallery Stanishev +1
Metalorganic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] cm has been performed. In a s…
Mg-doping and free-hole properties of hot-wall MOCVD GaN
Alexis Papamichail, Anelia Kakanakova, Einar O. Sveinbjörnsson +10
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for M…