29 citations · 30 across the 3 of their papers we have counts for
3 papers
Polarity control by inversion domain suppression in N-polar III-nitride heterostructures
Hengfang Zhang, Ingemar Persson, Jr. -Tai Chen +5
Nitrogen-polar III-nitride heterostructures offer advantages over metal-polar structures in high frequency and high power applications. However, polarity control in III-nitrides is…
Super-High-Frequency Low-Loss Sezawa Mode SAW Devices in a GaN/SiC Platform
Imtiaz Ahmed, Udit Rawat, Jr-Tai Chen +1
This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching frequencies above…
Mg-doping and free-hole properties of hot-wall MOCVD GaN
Alexis Papamichail, Anelia Kakanakova, Einar O. Sveinbjörnsson +10
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for M…