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cond-mat.mtrl-sci2025
Oxygen-vacancy quantum spin defects in silicon carbide
Yu Chen, Qi Zhang, Mingzhe Liu +11
Optically addressable spin defects in wide-bandgap semiconductors are promising building blocks for quantum sensing and quantum networks. Establishing their atomic structure is ess…
cond-mat.mtrl-sci2025★ 3 cited
Towards Identifying the PL6 Center in SiC: From First-Principles Screening to Hyperfine Validation of Competing Defect Candidates
Xin Zhao, Mingzhe Liu, Yu Chen +2
The PL6 color center in 4H-SiC, known for its excellent ambient-temperature spin and optical properties, has an unresolved microscopic origin. In this first-principles study, we sy…