17 citations · 68 across the 13 of their papers we have counts for
6 papers · 1 filter
Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping
Qing Lan, Wenqing Song, Siyin Zhu +13
The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challeng…
Persistent Interfacial Topological Hall Effect Demonstrating Electrical Readout of Topological Spin Structures in Insulators
Jing Li, Huilin Lai, Andrew H. Comstock +12
Conventional topological Hall effects (THE) require conducting magnets, leaving insulating systems largely inaccessible. Here we introduce the interfacial topological Hall effect (…
Unexpected large electrostatic gating by pyroelectric charge accumulation
Yicheng Mou, Qi Liu, Jiaqi Liu +10
Pyroelectricity refers to the accumulation of charges due to changes in the spontaneous polarization of ferroelectric materials when subjected to temperature variations. Typically,…
Giant interfacial Dzyaloshinskii-Moriya Interaction in perovskite La_{0.7}Sr_{0.3}MnO_{3} films
L. Yang, X. Zhang, H. Wang +14
The Dzyaloshinskii-Moriya interaction (DMI) plays a critical role in stabilizing topological spin textures, a key area of growing interest in oxide-based spintronics. While most of…
Large nonlinear Hall effect and Berry curvature in KTaO3 based two-dimensional electron gas
Jinfeng Zhai, Mattia Trama, Hao Liu +6
The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the em…
Magnetic domain structure and domain wall bound states of topological semimetal EuB6
Qiang Li, Haiyang Ma, Xin Zhang +5
Electrically manipulating domain wall (DW) is at central in the field of spintronics. Magnetic Weyl semimetal (WSM) offers an additional knob for electric manipulation of DW by uti…