3 papers
cond-mat.mtrl-sci2026
High-Mobility and High-Reliability Top-Gate Oxide Semiconductor Transistors by Oxygen Engineering
Kai Jiang, Zhiyu Lin, Ziheng Wang +2
In this work, we investigate the role of oxygen (O) on the performance of top-gate (TG) atomic-layer-deposited (ALD) oxide semiconductor transistors. The results reveal distinct de…
cond-mat.mtrl-sci2025
Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature
Chen Wang, Kai Jiang, Jinxiu Zhao +4
In this work, we report high-performance atomic-layer-deposited indium oxide (In2O3) transistors with high gated-Hall mobility (μH) exceeding 100 cm2/Vs at room temperature (RT).…
cond-mat.mtrl-sci2025
Are There High-Density Deep States in AtomicLayer-Deposited IGZO Thin Film?
Liankai Zheng, Lijuan Xing, Zhiyu Lin +9
It has been well recognized that there exist high-density deep states in IGZO thin films. Many of the device characteristics of IGZO transistors, such as negative bias illumination…