3 papers
cond-mat.mtrl-sci2026
Growth optimization of shallow Ge quantum wells grown by molecular beam epitaxy
J. T. Dong, J. P. Thompson, R. Card +2
Shallow strained Ge quantum wells have gained recent attention for realizing scalable, high-performance hybrid superconductor/semiconductor-based qubits. Epitaxial superconducting…
cond-mat.mes-hall2025
Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
C. P. Dempsey, J. T. Dong, I. Villar Rodriguez +6
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologi…
cond-mat.mes-hall2025
Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts
I. Villar Rodriguez, Y. Gul, C. P. Dempsey +4
In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 p…