2 papers
physics.app-ph2023
Investigation of Magnesium Silicate as an Effective Gate Dielectric for AlGaN/GaN Metal Oxide High Electron Mobility Transistors (MOSHEMT)
Seshasainadh Pudi, Navneet Bhardwaj, Ritam Sarkar +6
In this study, a 6 nm layer of Magnesium Silicate (Mg-Silicate) was deposited on AlGaN/GaN heterostructure by sputtering of multiple stacks of MgO and SiO, followed by rapid…
physics.app-ph2022
Scaling nanowire-supported GaN quantum dots to the sub-10-nm limit, yielding complete suppression of the giant built-in potential
Swagata Bhunia, Ritam Sarkar, Dhiman Nag +3
The nanowire-supported quantum dot (NWQD) of GaN is an unconventional nanostructure, which is extremely promising for realization of UV photonics in general, and room-temperature s…