most citedNon-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

3 citations · 3 across the 1 of their papers we have counts for

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1 paper

physics.app-ph2022★ 3 cited

Non-destructive Depth-Resolved Characterization of Residual Strain Fields in High Electron Mobility Transistors using Differential Aperture X-ray Microscopy

Darren C. Pagan, Md Abu Jafar Rasel, Rachel E. Lim +3

Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely,…