42 citations · 65 across the 4 of their papers we have counts for
4 papers
A Scalable Compact Model for the Static Drain Current of Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena +2
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induce…
Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…
Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…