4 papers
What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?
Francesco Lodola, Zhuangyi Zhou, Boaz Koren +10
Among the highly efficient photovoltaic technologies, that do not rely on epitaxy, only chalcopyrites have a bandgap tunable down to 1.00 eV, the ideal for tandem applications. Thi…
Silver Alloyed Wide Bandgap (Ag,Cu)(In,Ga)S2 Thin Film Solar Cells With 15.5% Efficiency
Yucheng Hu, Ece Washbrook, Arivazhagan Valluvar Oli +14
Sulfide chalcopyrite Cu(In,Ga)S2 (CIGS) is a wide bandgap semiconductor suitable for the top cell of a tandem solar device. Here we demonstrate significant improvements in absorber…
Sodium induced beneficial effects in wide bandgap Cu(In,Ga)S2 solar cell with 15.7% efficiency
Arivazhagan Valluvar Oli, Kulwinder Kaur, Michele Melchiorre +10
This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high…
The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells
Sevan Gharabeiki, Francesco Lodola, Tilly Schaaf +9
The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transi…