4 papers
What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?
Francesco Lodola, Zhuangyi Zhou, Boaz Koren +10
Among the highly efficient photovoltaic technologies, that do not rely on epitaxy, only chalcopyrites have a bandgap tunable down to 1.00 eV, the ideal for tandem applications. Thi…
Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer
Taowen Wang, Longfei Song, Saeed Bayat +6
Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)…
Ferroelectric HfO-ZrO multilayers with reduced wake-up
Barnik Mandal, Adrian-Marie Philippe, Nathalie Valle +3
Since the discovery of ferroelectricity in HfO thin films, significant research has focused on Zr-doped HfO and solid solution (Hf,Zr)O thin films. Functional propertie…
The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells
Sevan Gharabeiki, Francesco Lodola, Tilly Schaaf +9
The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transi…