Adrian-Marie Philippe

collaborators

4 papers

cond-mat.mtrl-sci2026

What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?

Francesco Lodola, Zhuangyi Zhou, Boaz Koren +10

Among the highly efficient photovoltaic technologies, that do not rely on epitaxy, only chalcopyrites have a bandgap tunable down to 1.00 eV, the ideal for tandem applications. Thi…

cond-mat.mtrl-sci2025

Solution-Based Fabrication of High-Performance K $_{0.5}$ Na $_{0.5}$ NbO $_{3}$ Thin Films for Surface Haptics

Nagamalleswara Rao Alluri, Longfei Song, Stephanie Girod +8

K $_{0.5}$ Na $_{0.5}$ NbO $_{3}$ is among the most promising lead-free piezoelectrics. While its sputtered films match the performance of the champion piezoelectric Pb(Zr,Ti)O $_{3}$ , repro…

cond-mat.mtrl-sci2025

Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer

Taowen Wang, Longfei Song, Saeed Bayat +6

Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)…

cond-mat.mtrl-sci2025

Ferroelectric HfO $_{2}$ -ZrO $_{2}$ multilayers with reduced wake-up

Barnik Mandal, Adrian-Marie Philippe, Nathalie Valle +3

Since the discovery of ferroelectricity in HfO $_{2}$ thin films, significant research has focused on Zr-doped HfO $_{2}$ and solid solution (Hf,Zr)O $_{2}$ thin films. Functional propertie…

What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?

Solution-Based Fabrication of High-Performance K0.5​Na0.5​NbO3​ Thin Films for Surface Haptics

Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer

Ferroelectric HfO2​-ZrO2​ multilayers with reduced wake-up

Solution-Based Fabrication of High-Performance K $_{0.5}$ Na $_{0.5}$ NbO $_{3}$ Thin Films for Surface Haptics

Ferroelectric HfO $_{2}$ -ZrO $_{2}$ multilayers with reduced wake-up