6 papers
Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide
Praveen Viswanathan, Erik Lemmens Sjöstrand, Davide Costa +8
Hybrid superconductor-semiconductor systems provide a versatile platform for quantum technologies, ranging from superconducting-spin interfaces to topological quantum devices. Prog…
Phase controlled multi-terminal Josephson junction in ternary hybrid nanowire
Sabbir A. Kahn, Lukas Stampfer, Sara Marti-Sanchez +7
This work presents multiterminal Josephson junctions in hybrid semiconductor-superconductor InAsSb-Al nanocrosses. Hybrid nanocrosses are grown using molecular beam epitaxy and are…
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Lucas E. A. Stehouwer, Merrit P. Losert, Maia Rigot +6
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursue…
Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling
Marc Botifoll, Ivan Pinto-Huguet, Enzo Rotunno +17
(Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the…
Reducing disorder in Ge quantum wells by using thick SiGe barriers
Davide Costa, Lucas E. A. Stehouwer, Yi Huang +4
We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semi…