3 papers
cond-mat.mtrl-sci2025
Numerical Modeling of Cu2MnSnS4/FeSi2 Dual-Absorber Solar Cell Achieving High Efficiency
Hasib Md Abid Bin Farid, Md Tashfiq Bin Kashem
Dual-absorber solar cells represent a promising approach to surpass the efficiency limit of single-junction devices by extending spectral absorption and minimizing thermalization l…
physics.app-ph2025
Dual-Material Double-Gate Source-Pocket Tunnel Field Effect Transistor with Homogeneous Gate Dielectric: Computational Analysis of Structural and Material Parameters for Enhanced Performance
Ramisa Fariha, Saikat Das, Labiba Tanjil Nida +2
Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superi…
physics.app-ph2024
Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures
A B M Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan +3
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5…