3 papers
physics.ins-det2025
Studies on the effect of low-fluence proton and neutron irradiation on n-type LGADs
Veronika Kraus, Marcos Fernandez Garcia, Salvador Hidalgo +2
The presented study investigates the effects of low fluences from up to particles/cm of 60MeV proton and neutron irradiation on n-type Low G…
hep-ex2025
Defects and acceptor removal in 60Co γ-irradiated p-type silicon
Anja Himmerlich, Núria Castelló-Mor, Esteban Currás-Rivera +11
Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the a…
physics.ins-det2024
TCAD Simulation of Two Photon Absorption -- Transient Current Technique measurements on Silicon Detectors and LGADs
Sebastian Pape, Michael Moll, Marcos Fernández García +1
Device simulation plays a crucial role in complementing experimental device characterisation by enabling deeper understanding of internal physical processes. However, for simulatio…