2 papers
physics.app-ph2024
Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
Vera Lendyashova, Igor Ilkiv, Bogdan Borodin +4
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a s…
cond-mat.mes-hall2023
Indirect-to-direct bandgap transition in few-layer -InSe as probed by photoluminescence spectroscopy
Bogdan R. Borodin, Ilya A. Eliseyev, Aidar I. Galimov +4
InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure,…