6 papers
Photoluminescence Features of Few-Layer Hexagonal -InSe
I. A. Eliseyev, A. I. Veretennikov, A. I. Galimov +9
Indium (III) selenide is currently one of the most actively studied materials in the two-dimensional family due to its remarkable ferroelectric and optical properties. This study f…
Mie-resonant silicon waveguide for efficient coupling with excitonic emitters in InSe
Timofey V. Antipov, Alexandra D. Gartman, Dmitry N. Gulkin +7
Enhancement of radiative coupling efficiency between out-of-plane excitonic emitters in an indium selenide (InSe) film and an integrated waveguide formed by silicon (Si) Mie-resona…
Engineering whispering gallery modes in MoSe/WS double heterostructure nanocavities: Towards developing all-TMDC light sources
P. A. Alekseev, I. A. Milekhin, K. A. Gasnikova +7
Transition metal dichalcogenides (TMDCs) have emerged as highly promising materials for nanophotonics and optoelectronics due to their exceptionally high refractive indices, strong…
Direct observation of split-mode exciton-polaritons in a single MoS nanotube
A. I. Galimov, D. R. Kazanov, A. V. Poshakinskiy +5
A single nanotube synthesized from a transition metal dichalcogenide (TMDC) exhibits strong exciton resonances and, in addition, can support optical whispering gallery modes. This…
Allotropic GaSe/GaSe nanostructures grown by van der Waals epitaxy: Narrow exciton lines and single-photon emission
Maxim Rakhlin, Sergey Sorokin, Aidar Galimov +5
The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenid…
Indirect-to-direct bandgap transition in few-layer -InSe as probed by photoluminescence spectroscopy
Bogdan R. Borodin, Ilya A. Eliseyev, Aidar I. Galimov +4
InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure,…