6 citations · 7 across the 4 of their papers we have counts for
4 papers · 1 filter
Micro-crystal GaAs array sub-cells for Si tandem solar cells
James P. Connolly, Ahmed Nejim, Alexandre Jaffré +9
This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a…
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
Laser doping for ohmic contacts in n-type Ge
F. Chiodi, A. D. Chepelianskii, C. Gardes +3
We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the l…
Designing III-V Multijunction Solar Cells on Silicon
J. P. Connolly, D. Mencaraglia, C. Renard +1
Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multi…