1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
cond-mat.mtrl-sci2021★ 1 cited
Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires
Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche +5
The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape,…