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cond-mat.mtrl-sci2022
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
cond-mat.mtrl-sci2013★ 1 cited
Designing III-V Multijunction Solar Cells on Silicon
J. P. Connolly, D. Mencaraglia, C. Renard +1
Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multi…