3 citations · 3 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2022
Growth-related formation mechanism of I-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Laetitia Vincent, Elham M. T. Fadaly, Charles Renard +6
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic fun…
cond-mat.mtrl-sci2013★ 3 cited
Growth Route Toward III-V Multispectral Solar Cells on Silicon
C. Renard, N. Cherkashin, A. Jaffré +8
To date, high efficiency multijunction solar cells have been developed on Ge or GaAs substrates for space applications, and terrestrial applications are hampered by high fabricatio…