16 citations · 30 across the 3 of their papers we have counts for
3 papers
physics.optics2022
Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Paweł Wolny, Henryk Turski, Grzegorz Muziol +6
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) ha…
physics.app-ph2022★ 14 cited
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek +8
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitax…
cond-mat.mtrl-sci2017★ 16 cited
Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
C. Chèze, F. Feix, J. Lähnemann +6
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…