27 citations · 85 across the 4 of their papers we have counts for
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Abnormal behavior of preferred formation of cationic vacancy from the interior in γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state
Changmeng Huan, Yongqing Cai, Devesh R. Kripalani +2
Two-dimensional (2D) materials tend to have the preferably formation of vacancies at the outer surface. Here, contrary to the normal notion, we reveal a type of vacancy that thermo…
Versatile van der Waals Heterostructures of Gamma-GeSe with h-BN/Graphene/MoS2
Changmeng Huan, Pu Wang, Bingtao Liu +3
Recent discovery of a novel hexagonal phase of GeSe (Gamma-GeSe) has triggered great interests in nanoelectronics applications owing to its electrical conductivity of bulk phase ev…
Highly Modulated Dual Semimetal and Semiconducting Gamma-GeSe with Strain Engineering
Changmeng Huan, Pu Wang, Binghan He +2
Layered hexagonal Gamma--GeSe, a new polymorph of GeSe synthesized recently, shows strikingly high electronic conductivity in its bulk form (even higher than graphite) while semico…
Oxygen Deficient α-MoO3 with Promoted Adsorption and State-Quenching of H2O for Gas Sensor: A DFT Study
Changmeng Huan, Pu Wang, Binghan He +2
Semiconducting oxides with reducible cations are ideal platforms for various functional applications in nanoelectronics and catalysts. Here we report an ultrathin monolayer alpha-M…