Improving the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

Yuanchao Huang, Rong Wang, Yixiao Qian +3

The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full…