35 citations · 83 across the 3 of their papers we have counts for
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cond-mat.mtrl-sci2022★ 20 cited
Nitrogen decoration of basal plane dislocations in 4H-SiC
Jiajun Li, Hao Luo, Guang Yang +4
Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitro…
cond-mat.mtrl-sci2021★ 28 cited
Improving the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements
Yuanchao Huang, Rong Wang, Yixiao Qian +3
The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full…
cond-mat.mtrl-sci2015★ 35 cited
Chemical modification of silicene
Rong Wang, Mingsheng Xu, Xiaodong Pi
Silicene is a two-dimensional material, which is composed of a single layer of silicon atoms with sp2-sp3 mixed hybridization. The sp2-sp3 mixed hybridization renders silicene exce…