28 citations · 48 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022★ 20 cited
Nitrogen decoration of basal plane dislocations in 4H-SiC
Jiajun Li, Hao Luo, Guang Yang +4
Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitro…
cond-mat.mtrl-sci2021★ 28 cited
Improving the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements
Yuanchao Huang, Rong Wang, Yixiao Qian +3
The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full…