3 papers
physics.app-ph2026
Reduced Dark Current in Cd0.9Zn0.1Te Detector Arrays by Aluminium Oxide Passivation
Sudarshan Singh, Luc Montpetit, Eloïse Rahier +3
Contrary to the prevailing view that processing cadmium zinc telluride (CZT) semiconductors above 150 °C leads to irreversible device degradation, here we show that Al2O3 passivati…
physics.optics2024
Optically Pumped Terahertz Amplitude Modulation in Type-II Ge QD/Si heterostructures grown via Molecular Beam Epitaxy
Suprovat Ghosh, Abir Mukherjee, Sudarshan Singh +4
This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in th…
cond-mat.mtrl-sci2022
Ge-GeSn core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Sudarshan Singh, Subhrajit Mukherjee, Samik Mukherjee +5
Recent development on GeSn nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at…