Shiying Guo

most citedHigh-performance and Low-power Transistors Based on Anisotropic Monolayer

β

-TeO

_{2}

1 citations · 2 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2025★ 1 cited

Computational Design of Two-Dimensional MoSi $_{2}$ N $_{4}$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes

Che Chen Tho, Zongmeng Yang, Shibo Fang +9

Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mater…

cond-mat.mes-hall2022★ 1 cited

High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$ -TeO $_{2}$

Shiying Guo, Hengze Qu, Wenhan Zhou +5

Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabr…

Computational Design of Two-Dimensional MoSi2​N4​ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes

High-performance and Low-power Transistors Based on Anisotropic Monolayer β-TeO2​

Computational Design of Two-Dimensional MoSi $_{2}$ N $_{4}$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes

High-performance and Low-power Transistors Based on Anisotropic Monolayer $β$ -TeO $_{2}$